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| AP0903GMA Pb Free Plating Product Advanced Power Electronics Corp. SO-8 similar area footprint and pin assignment Low Gate Charge Fast Switching Speed RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 9m 60A D Description The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S SS G APAK-5 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 60 38 195 45 0.36 4 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3 Value Max. Max. 2.8 85 Units /W /W Data and specifications subject to change without notice 200401053-1/4 AP0903GMA Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.02 35 17 5 10.3 8.2 105 21.4 8.5 245 170 1.5 Max. Units 9 18 3 1 250 100 26 2.3 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=33A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=33A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=20V ID=33A VDS=20V VGS=4.5V VDS=15V ID=33A RG=3.3,VGS=10V RD=0.45 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1485 2400 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=60A, VGS=0V IS=30A, VGS=0V, dI/dt=100A/s Min. - Typ. 29 12 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board. 4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25 2/4 AP0903GMA 120 120 T C =25 C ID , Drain Current (A) o 10V 7.0V 5.0V ID , Drain Current (A) 90 T C =150 C o 10V 7.0V 80 4.5V 5.0V 60 4.5V 40 30 V G = 3.0 V 0 0 2 4 6 V G = 3.0 V 0 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 24 1.7 20 Normalized RDS(ON) I D =20A T C =25 I D =33A V G =10V 1.3 RDS(ON) (m) 16 0.9 12 8 0.5 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.7 20 15 Normalized VGS(th) (V) 1.2 1.2 IS(A) 10 T j =150 o C T j =25 o C 0.7 5 0 0 0.2 0.4 0.6 0.8 1 0.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP0903GMA f=1.0MHz 12 10000 I D =33A VGS , Gate to Source Voltage (V) 9 V DS =16V V DS =20V V DS =24V C (pF) 1000 6 C iss 3 C oss C rss 0 0 5 10 15 20 25 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 ID (A) 0.1 0.1 0.05 100us 1ms 10 PDM 0.02 t T Single Pulse T C =25 o C Single Pulse 1 0.1 1 10 0.01 10ms 100ms DC 100 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance 90 V DS =5V o o VG T j =25 C T j =150 C ID , Drain Current (A) QG 4.5V QGS QGD 60 30 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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